2021 JAPAN–TAIWAN Advanced Materials and Semiconductor Technology Workshop Gallium Nitride (GaN) High–Electron–Mobility Transistors (HEMTs) with Thick Copper Metallization for Performance Improvement at Millimeter–wave Frequency Information Date and Time October 28, 2021 15:25 – 15:50 Venue Online Program Speaker Heng–Tung Hsu (NYCU) Video